Prof. Ahmed Radwan

This chapter introduces the basic definition of meminductor and its mathematical representation of time-invariant system (Ideal, Generic, and Extended) with some examples. The mathematical model of meminductor and its response under different current excitations (step, sinusoidal, and periodic) are discussed with analytical, numerical, and circuit simulations. Different meminductor emulators are

This chapter discusses the analysis and design of memristor-based oscillators which is considered one of the nonlinear analog block required for many applications such as chaotic memristor oscillators and artificial neuron network. The realizations of memristor-based oscillators have been discussed via replacing capacitors with memristors to construct relaxation reactance-less oscillators. The

This chapter discusses the main properties of the memristor, a comparison between five recent memristor models, mathematical modeling of the HP memristor with analytical expressions for different excitations, mathematical representations of time-invariant memristor (ideal, generic, and extended), different memristor implementation types, and some memristor-based applications in digital and analog

This chapter introduces different generalized mathematical classes of memristors which can be categorized as: continuous symmetrical models (current and voltage controlled emulators), continuous nonsymmetrical model, switched-memristor model, and fractional-order model with some experimental results. Different emulators with experimental results are discussed based on CCII, discrete components

This paper discusses the boundary dynamics of the charge-controlled memcapacitor for Joglekar’s window function that describes the nonlinearities of the memcapacitor’s boundaries. A closed form solution for the memcapacitance is introduced for general doping factor (Formula presented.)p. The derived formulas are used to predict the behavior of the memcapacitor under different voltage excitation

This paper presents the analysis for allocating the system poles and hence controlling the system stability for KHN and Sallen–Key fractional order filters. The stability analysis and stability contours for two different fractional order transfer functions with two different fractional order elements are presented. The effect of the transfer function parameters on the singularities of the system

This paper presents a study of fractional order oscillator design based on a matrix. The presented oscillator consists of a general two port network and three impedances. Only two port with single element in its transmission matrix is discussed which gives four possible networks. Different combinations for one element have been investigated. The impedances associated with the studied networks are

In this paper, a general analysis of the fractional order operational transresistance amplifiers (OTRA) based oscillator is presented and validated through eight different circuits which represent two classifications according to the number of OTRAs. The general analytical formulas of the oscillation frequency, condition as well as the phase difference are illustrated for each case and summarized

This paper introduces a novel 2T2M memristor based memory cell which, offers higher stability and noise margins than previous works. The proposed 2T2M RRAM module is similar to conventional 6T SRAM module in terms of delay and number of interface pins. However, the predicted area of the proposed 2T2M RRAM cell is significantly lower compared to the CMOS based 6T SRAM cell, and is also expected to