Series and parallel circuit models containing memristors and inverse memristors

In this paper, we propose a single equation that can be used to describe a circuit that contains series or parallel-connected R, L, C and memristor components in addition to a new element called inverse memristor M. Connecting these elements either series or parallel affects the pinched hysteresis lobes where the pinch point moves from the origin and lobes area shrinks or widens. Different cases of connecting different elements have been discussed clearly especially connecting memristor and inverse memristor together either series or parallel gives new response and behavior which can be used describe some physical devices. Finally, some cases of parallel-connected elements is verified using SPICE simulations. © 2015 IEEE.