Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Elanzeery H.
Buffière M.
Messaoud K.B.
Oueslati S.
Brammertz G.
Daif O.E.
Cheyns D.
Guindi R.
Meuris M.
Poortmans J.

Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X-ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 μm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.